december 2010 FDPF320N06L n-channel powertrench ? mosfet ?2010 fairchild semiconductor corporation FDPF320N06L rev. a4 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* *drain current limited by maximum junction temperature thermal characteristics symbol parameter FDPF320N06L units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 21 a - continuous (t c = 100 o c) 15 i dm drain current - pulsed (note 1) 84 a e as single pulsed avalanche energy (note 2) 66 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 26 w - derate above 25 o c0.17w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDPF320N06L units r jc thermal resistance, junction to case 5.8 o c/w r ja thermal resistance, junction to ambient 62.5 FDPF320N06L n-channel powertrench ? mosfet 60v, 21a, 25m features ?r ds(on) = 20m ( typ.)@ v gs = 10v, i d = 21a ?r ds(on) = 23m ( typ.)@ v gs = 5v, i d = 17a ? low gate charge ( typ. 23.2nc) ?low c rss ( typ. 64pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ?rohs compliant description this n-channel mosfet is produced using fairchild semiconductor?s advance powert rench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters / synchronous rectification g s d to-220f (retractable) g e c
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDPF320N06L FDPF320N06L to-220f - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 60 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.04 - v/ o c i dss zero gate voltage drain current v ds = 48v, v gs = 0v - - 1 a v ds = 48v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.0-2.5v r ds(on) static drain to source on resistance v gs = 10v, i d = 21a - 20 25 m v gs = 5v, i d = 17a - 23 38 m g fs forward transconductance v ds = 10v, i d = 21a (note 4) -34-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 1105 1470 pf c oss output capacitance - 115 150 pf c rss reverse transfer capacitance - 64 - pf q g(tot) total gate charge at 10v v gs = 10v v ds = 48v i d = 21a - 23.2 30.2 nc q g(tot) total gate charge at 5v v gs = 5v - 12.7 16.5 nc q gs gate to source gate charge - 3.4 - nc q gd gate to drain ?miller? charge - 6.3 - nc t d(on) turn-on delay time v dd = 30v, i d = 21a v gs = 5v, r gen = 4.7 (note 4, 5) -1642ns t r turn-on rise time - 34 78 ns t d(off) turn-off delay time - 27 64 ns t f turn-off fall time - 8 26 ns esr equivalent series resistance (g-s) - 2 - i s maximum continuous drain to source diode forward current - - 21 a i sm maximum pulsed drain to source diode forward current - - 84 a v sd drain to source diode forward voltage v gs = 0v, i sd = 21a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 21a, v dd = 48v di f /dt = 100a/ s (note 4) -27-ns q rr reverse recovery charge - 23 - nc notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1mh, i as = 11.5a, r g = 25 , starting t j = 25 c 3. i sd 21a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 4 2 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 5.0v 4.0v 3.5v 3.0v 12345 1 10 100 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.0 0.5 1.0 1.5 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 20406080100 0.01 0.02 0.03 0.04 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 60 40 100 1000 4000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12162024 0 2 4 6 8 10 *note: i d = 21a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11 . transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 21a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 0.01 0.1 1 10 100 300 100ms 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 6 12 18 24 v gs = 5 v r jc = 5.8 o c/w v gs = 10 v i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 110 100 0.01 0.1 1 8 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 5.8 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDPF320N06L n-channel powertrench ? mosfet FDPF320N06L rev. a4 www.fairchildsemi.com 7 package dimensions dimensions in millimeters to-220f * front/back side isolation voltage : ac 2500v
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